Influence of the surface reconstruction on the growth of InP on SrTiO3(001)

被引：11

作者：

Cheng, J. ^{[1
]}

Regreny, P. ^{[1
]}

Largeau, L. ^{[2
]}

Patriarche, G. ^{[2
]}

Mauguin, O. ^{[2
]}

Naji, K. ^{[1
]}

Hollinger, G. ^{[1
]}

Saint-Girons, G. ^{[1
]}

机构：

[1] Univ Lyon, Ecole Cent Lyon, INL UMR5270, CNRS, F-69134 Ecully, France

[2] LPN UPR20, CNRS, F-91460 Marcoussis, France

来源：

JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 04期

关键词：

Interfaces; Nanostructures; Molecular beam epitaxy; Oxides; Semiconducting III-V materials; SILICON;

D O I：

10.1016/j.jcrysgro.2008.12.014

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A study of the epitaxial growth of InP on SrTiO3(001) (STO) substrates is presented. Reflection high energy electron diffraction (RHEED) and X-ray diffraction experiments evidence the strong influence of STO surface reconstruction on the InP crystalline orientation. When grown on unreconstructed (001) STO surfaces, the InP lattice has its [111] direction perpendicular to the growth plane. When grown on (2 x 1) reconstructed STO surfaces, InP is (001) oriented on the (001) STO substrate. In both cases, at least one [110] InP in-plane direction is aligned to one of the [100] STO direction. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1042 / 1045

页数：4

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