Formation of narrow channels using split back-gates defined by in situ focused ion beam lithography

被引：4

作者：

Iredale, N

Linfield, EH

Rose, PD

Ritchie, DA

Pepper, M

Jones, GAC

机构：

[1] Univ of Cambridge, Cambridge

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1997年 / 12卷 / 01期

关键词：

DIMENSIONAL ELECTRON-GAS; PATTERNED EPILAYER; EPITAXIAL REGROWTH; MBE REGROWTH; FABRICATION; TRANSISTOR;

D O I：

10.1088/0268-1242/12/1/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated high electron mobility transistors incorporating split back-gates using the technique of in situ focused ion beam lithography and molecular beam epitaxial regrowth. We show that it is possible to form quasi-ballistic channels by biasing the split back-gate and have succeeded in defining wires of 400 nm width. Application of a small perpendicular magnetic field has allowed us to demonstrate that boundary scattering in these devices is mostly specular, as for conventional structures fabricated with Schottky gates.

引用

页码：137 / 139

页数：3

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