SAM: A new GHz sampling ASIC for the HESS-II front-end electronics

被引:58
作者
Delagnes, E.
Degerli, Y.
Goret, P.
Nayman, P.
Toussenel, F.
Vincent, P.
机构
[1] CEA Saclay, DSM DAPNIA, CE Saclay, F-91191 Gif Sur Yvette, France
[2] Univ Paris 06, CNRS, LPHNE, IN2P3, Paris, France
[3] Univ Paris 07, F-75221 Paris 05, France
关键词
ASIC; analogue memory; sampler; analogue to digital conversion; readout;
D O I
10.1016/j.nima.2006.05.052
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The H.E.S.S.II front-end electronics, with its 20 GeV energy threshold, will require a much higher acquisition rate capability and a larger dynamic range than was relevant for H.E.S.S.-I. These constraints led to the development of a new ASIC, called SAM for Swift Analogue Memory, to replace the ARS used for H.E.S.S.-I. The SAM chip features 2 channels for the low and high gain outputs of a PMT, each channel having a depth of 256 analogue memory cells. The sampling frequency is adjustable from 0.7 up to 2GS/s and the read-out time for one event is decreased from 275 down to 2.3 ps. The SAM input bandwidth and dynamic range are increased up to 300 MHz and roore than 11 bits, respectively. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:21 / 26
页数:6
相关论文
共 5 条
[1]   Very high dynamic range and high sampling rate VME digitizing boards for physics experiments [J].
Breton, D ;
Delagnes, E ;
Houry, M .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2005, 52 (06) :2853-2860
[2]  
Hofmann W., 2003, P 28 ICRC TSUK, P2811
[3]   Application specific integrated circuits for ANTARES offshore front-end electronics [J].
Lachartre, D ;
Feinstein, F .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2000, 442 (1-3) :99-104
[4]  
Vincent P, 2005, PROCEEDINGS OF THE 29TH INTERNATIONAL COSMIC RAY CONFERENCE, VOL 5: OG 2.5, 2.6 & 2.7, P163
[5]  
VINCENT P, 2003, P 28 ICRC TSUK, P2887