Field-emission studies of boron-doped CVD diamond films following surface treatments

被引：17

作者：

Fox, NA ^{[1
]}

Mary, S ^{[1
]}

Davis, TJ ^{[1
]}

Wang, WN ^{[1
]}

May, PW ^{[1
]}

Bewick, A ^{[1
]}

Steeds, JW ^{[1
]}

Butler, JE ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

关键词：

field-emission; CVD diamond; boron doping; surface treatment;

D O I：

10.1016/S0925-9635(97)00030-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electron emission from highly twinned, undoped Chemical Vapour Deposited (CVD) diamond thin films has been found to exhibit a stable voltage threshold of 15 V mu m(-1). In this study the same material has been boron-doped by ion-implantation at two different energy profiles. A number of surface treatments including, Excimer laser annealing, hydrogen passivation, argon/oxygen plasma etching and also coating with gold, were employed in an attempt to enhance the electron emission properties of the highly twinned surface. It has been found that these treatments tend to degrade the electron emission performance, promoting more surface damage and instability in the electron emission current. These results are compared against the emission performance of samples of high quality boron-doped material exhibiting both similar and dissimilar surface textures. (C) 1997 Elsevier Science S.A.

引用

页码：1135 / 1142

页数：8

共 10 条

[1]

BANDIS C, 1996, APPL PHYS LETT, V69, P3

[2] NEGATIVE ELECTRON-AFFINITY EFFECTS ON H-PLASMA EXPOSED DIAMOND(100) SURFACES [J].