Investigation of the radiation damage of GaAs detectors by neutrons and photons

被引:18
作者
Braunschweig, W [1 ]
Kubicki, T [1 ]
Lubelsmeyer, K [1 ]
Pandoulas, D [1 ]
Syben, O [1 ]
Tenbusch, F [1 ]
Toporowsky, M [1 ]
Wilms, T [1 ]
Wittmer, B [1 ]
Xiao, WJ [1 ]
机构
[1] RHEIN WESTFAL TH AACHEN,INST PHYS 1,D-52056 AACHEN,GERMANY
关键词
D O I
10.1016/0168-9002(95)01297-4
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Surface barrier particle detectors, processed in Aachen using SI GaAs from several manufacturers, have been irradiated with neutrons (peak energy similar to 1 MeV) up to fluences of 4.0 x 10(14) n/cm(2) and with photons from a Co-60 source with a dose of 100 Mrad. All detectors work well after the irradiation. Detectors biased with 200 V during the neutron irradiation show no significant difference from those not biased. After irradiation with 4.0 X 10(14) n/cm(2) the leakage currents at 200 V are a factor of 4 greater than those before irradiation. At the highest radiation level the signal for minimum ionizing particles corresponds to 7200 electrons (at 200 V bias voltage) independent of peaking times between 40 ns and 2.2 mu s. The signals for alpha-particles (2.2 mu s peaking time, 200 V bias voltage) are about 20% of those before irradiation. The exposure to the 100 Mrad photon dose caused little change of the detector performance. The leakage currents were even reduced by about 10%.
引用
收藏
页码:111 / 116
页数:6
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