On the origin of the blueshift from type-II quantum dots emission using microphotoluminescence

被引:26
作者
Nakaema, MKK
Iikawa, F
Brasil, MJSP
Ribeiro, E
Medeiros-Ribeiro, G
Carvalho, W
Maialle, MZ
Degani, MH
机构
[1] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazil
[2] Lab Nacl Luz Sincrotron, BR-13084971 Campinas, SP, Brazil
[3] Univ Sao Francisco, BR-13251900 Itatiba, SP, Brazil
关键词
D O I
10.1063/1.1511812
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied type-II InP/GaAs self-assembled quantum dots by microphotoluminescence spectroscopy. Sharp spectral features were observed on top of a broad emission band. They are associated to statistical fluctuations from the ensemble of dots. Photoluminescence measurements as a function of the excitation intensity revealed markedly distinct behaviors: the broadband contour shows a large blueshift while the energy positions of the sharp features remain basically constant. We show that the large blueshift of the broad emission band in type-II quantum dots is not due to the barrier interface potential variation, but to the state filling of higher-energy states. (C) 2002 American Institute of Physics.
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收藏
页码:2743 / 2745
页数:3
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