Perfect preferential orientation of nitrogen-vacancy defects in a synthetic diamond sample

被引：106

作者：

Lesik, M. ^{[1
,2
,3
,4
]}

Tetienne, J. -P. ^{[1
,2
]}

Tallaire, A. ^{[5
]}

Achard, J. ^{[5
]}

Mille, V. ^{[5
]}

Gicquel, A. ^{[5
]}

Roch, J. -F. ^{[1
,2
]}

Jacques, V. ^{[1
,2
,3
,4
]}

机构：

[1] Univ Paris 11, CNRS, Lab Aime Cotton, F-91405 Orsay, France

[2] Ecole Normale Super, F-91405 Orsay, France

[3] Ecole Normale Super, Lab Photon Quant & Mol, F-94235 Cachan, France

[4] CNRS, UMR 8537, F-94235 Cachan, France

[5] CNRS, Lab Sci Proc & Mat, F-93340 Villetaneuse, France

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 11期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ATOMIC-SCALE SIMULATIONS; SINGLE-CRYSTAL DIAMOND; SPIN QUBITS; FILMS; CVD; ELECTRON;

D O I：

10.1063/1.4869103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that the orientation of nitrogen-vacancy (NV) defects in diamond can be efficiently controlled through chemical vapor deposition growth on a (111)-oriented diamond substrate. More precisely, we demonstrate that spontaneously generated NV defects are oriented with a similar to 97% probability along the [111] axis, corresponding to the most appealing orientation among the four possible crystallographic axes. Such a nearly perfect preferential orientation is explained by analyzing the diamond growth mechanism on a (111)-oriented substrate and could be extended to other types of defects. This work is a significant step towards the design of optimized diamond samples for quantum information and sensing applications. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 33 条

[1] Diamonds with a high density of nitrogen-vacancy centers for magnetometry applications [J].

Acosta, V. M. ;

Bauch, E. ;

Ledbetter, M. P. ;

Santori, C. ;

Fu, K. -M. C. ;

Barclay, P. E. ;

Beausoleil, R. G. ;

Linget, H. ;

Roch, J. F. ;

Treussart, F. ;

Chemerisov, S. ;

Gawlik, W. ;

Budker, D. .

PHYSICAL REVIEW B, 2009, 80 (11)

[2] Polarization-selective excitation of nitrogen vacancy centers in diamond [J].

Alegre, Thiago P. Mayer ;

Santori, Charles ;

Medeiros-Ribeiro, Gilberto ;

Beausoleil, Raymond G. .

PHYSICAL REVIEW B, 2007, 76 (16)

[3] Atomistic modeling of the polarization of nitrogen centers in diamond due to growth surface orientation [J].

Atumi, M. K. ;

Goss, J. P. ;

Briddon, P. R. ;

Rayson, M. J. .

PHYSICAL REVIEW B, 2013, 88 (24)

[4]

Balasubramanian G, 2009, NAT MATER, V8, P383, DOI [10.1038/nmat2420, 10.1038/NMAT2420]

[5] Atomic-scale simulations of chemical vapor deposition on flat and vicinal diamond substrates [J].

Battaile, CC ;

Srolovitz, DJ ;

Butler, JE .

JOURNAL OF CRYSTAL GROWTH, 1998, 194 (3-4) :353-368

[6] Morphologies of diamond films from atomic-scale simulations of chemical vapor deposition [J].

Battaile, CC ;

Srolovitz, DJ ;

Butler, JE .

[7] A mechanism for crystal twinning in the growth of diamond by chemical vapour deposition [J].

Butler, James E. ;

Oleynik, Ivan .

PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 2008, 366 (1863) :295-310

[8] Coherent dynamics of coupled electron and nuclear spin qubits in diamond [J].

Childress, L. ;

Dutt, M. V. Gurudev ;

Taylor, J. M. ;

Zibrov, A. S. ;

Jelezko, F. ;

Wrachtrup, J. ;

Hemmer, P. R. ;

Lukin, M. D. .

SCIENCE, 2006, 314 (5797) :281-285

[9] Universal Dynamical Decoupling of a Single Solid-State Spin from a Spin Bath [J].

de Lange, G. ;

Wang, Z. H. ;

Riste, D. ;

Dobrovitski, V. V. ;

Hanson, R. .

SCIENCE, 2010, 330 (6000) :60-63

[10] Room-temperature entanglement between single defect spins in diamond [J].

Dolde, F. ;

Jakobi, I. ;

Naydenov, B. ;

Zhao, N. ;

Pezzagna, S. ;

Trautmann, C. ;

Meijer, J. ;

Neumann, P. ;

Jelezko, F. ;

Wrachtrup, J. .

NATURE PHYSICS, 2013, 9 (03) :139-143

← 1 2 3 4 →