Growth and characterization of hypothetical zinc-blende ZnO films on GaAs(001) substrates with ZnS buffer layers

被引:172
作者
Ashrafi, ABMA
Ueta, A
Avramescu, A
Kumano, H
Suemune, I
Ok, YW
Seong, TY
机构
[1] Hokkaido Univ, Res Inst Elect Sci, Kita Ku, Sapporo, Hokkaido 0600812, Japan
[2] Kwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
关键词
D O I
10.1063/1.125851
中图分类号
O59 [应用物理学];
学科分类号
摘要
A stable wurtzite phase of ZnO is commonly observed. In this letter, we report the growth and characterization of zinc-blende ZnO on GaAs(001) substrates. The ZnO films grown on GaAs(001) substrates using microwave-plasma-assisted metalorganic molecular-beam epitaxy were characterized by reflection high-energy electron diffraction, x-ray diffraction, transmission electron microscope, and atomic force microscope measurements. The use of a ZnS buffer layer was found to lead to the growth of the zinc-blende ZnO films. Although the zinc-blende ZnO films were polycrystalline with columnar structures, they showed bright band-edge luminescence at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)01005-6].
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收藏
页码:550 / 552
页数:3
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