Effect of halide ions on the formation and dissolution behaviour of zirconium oxide

被引：16

作者：

ElMahdy, GA

Mahmoud, SS

ElDahan, HA

机构：

[1] AIN SHAMS UNIV,COLL WOMEN,DEPT CHEM,CAIRO,EGYPT

[2] NATL RES CTR,ELECTROCHEM & CORROS LAB,DOKKI,EGYPT

来源：

THIN SOLID FILMS | 1996年 / 286卷 / 1-2期

关键词：

zirconium; oxides; halides;

D O I：

10.1016/S0040-6090(95)08503-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of halide ions on the formation and dissolution behaviour of zirconium oxide was studied using galvanostatic and capacitance techniques. Increase of F- ion concentration and temperature restrict the oxide film growth and increase the average rate of dissolution of zirconium oxide. The Cl- ion causes a localized attack on zirconium during oxide formation and dissolves the oxide to some extent. The Br- ion has an appreciable attack on the oxide film formation and dissolution, while I- ion has a very low effect on both the formation and dissolution process of zirconium oxide. Oxide film formed at a high formation voltage was found to be more defective than that formed at a lower one.

引用

页码：289 / 294

页数：6

共 33 条

[1] ANODIC-OXIDATION OF ZIRCONIUM .2. GROWTH AND MORPHOLOGY OF ANODIC ZRO2 FILMS [J].