Band-gap engineering in CuIn(Se,S)2 absorbers for solar cells

被引：21

作者：

Bekker, J. ^{[1
]}

机构：

[1] Vaal Univ Technol, Dept NDT & Phys, ZA-1911 Vanderbijlpark, South Africa

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 05期

关键词：

CuIn(Se; S)(2); Partly selenized; Secondary phases; Band gap; THIN-FILM; DEPOSITION; CUINSE2; ALLOYS;

D O I：

10.1016/j.solmat.2008.11.014

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films based on CuInSe2 have become very successful as absorber layers for solar cells. It is only in the recent past that gallium (Ga) and sulfur (S) were incorporated into CuInSe2 in order to increase the energy band gap of the film to an optimum value with the ultimate aim of producing more efficient devices. This paper focuses on the incorporation of S into partly selenized CuInSe2 films in order to produce CuIn(Se,S)(2) films with varying S/Se+S ratios, resulting in different band-gal) energies. This was achieved by varying the conditions when selenizing Cu/In alloys in H2Se/Ar, and then exposing these various partly selenized films to H2S/Ar under identical conditions. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：539 / 543

页数：5

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