Insights into few-layer epitaxial graphene growth on 4H-SiC(000(1)over-bar substrates from STM studies

被引：198

作者：

Biedermann, Laura B. ^{[1
,2
]}

Bolen, Michael L. ^{[2
,3
]}

Capano, Michael A. ^{[2
,3
]}

Zemlyanov, Dmitry ^{[2
]}

Reifenberger, Ronald G. ^{[1
,2
]}

机构：

[1] Purdue Univ, Dept Phys, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Purdue Univ, Sch Elect Engn, W Lafayette, IN 47907 USA

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 12期

关键词：

SCANNING-TUNNELING-MICROSCOPY; CHEMICAL-VAPOR-DEPOSITION; THIN GRAPHITE FILMS; SILICON-CARBIDE; ATOMIC-STRUCTURE; SURFACE; 6H-SIC(0001); GRAPHITIZATION; IMAGES; SCATTERING;

D O I：

10.1103/PhysRevB.79.125411

中图分类号：

T [工业技术];

学科分类号：

120111 [工业工程];

摘要：

Epitaxial carbon was grown by heating (000 (1) over bar) silicon carbide (SiC) to high temperatures (1450-1600 degrees C) in vacuum. A continuous graphene surface layer was formed at temperatures above 1475 degrees C. X-ray photo-electron spectroscopy (XPS) and scanning tunneling microscopy (STM) were extensively used to characterize the quality of the few-layer graphene (FLG) surface. The XPS studies were useful in confirming the graphitic composition and measuring the thickness of the FLG samples. STM studies revealed a wide variety of nanometer-scale features that include sharp carbon-rich ridges, moire superlattices, one-dimensional line defects, and grain boundaries. By imaging these features with atomic-scale resolution, considerable insight into the growth mechanisms of FLG on the carbon face of SiC is obtained.

引用

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