Magnetic tunnel junctions prepared by ultraviolet light assisted oxidation

被引：14

作者：

Rottländer, P

Kohlstedt, H

de Gronckel, HAM

Girgis, E

Schelten, J

Grünberg, P

机构：

[1] Forschungszentrum Julich, Inst Solid State Res, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Thin Film & Ion Technol, D-52425 Julich, Germany

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 210卷 / 1-3期

关键词：

tunnelling magnetoresistance; TMR; oxidation; UV light; sputtering; MOKE; magnetic RAM;

D O I：

10.1016/S0304-8853(99)00588-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ultraviolet light assisted oxidation has been applied for the first time to oxidize the barriers in ferromagnetic tunnel junctions. It is shown that this method produces junctions of good quality with an area resistance of the order of 1 k Omega mu m(2) which is very attractive as the key device for future magneto random access memories. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：251 / 256

页数：6

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[1] THEORY OF THE OXIDATION OF METALS [J].