Optical feedback system with integrated color sensor on LCD

被引:18
作者
Lee, Ki-Chan [1 ]
Moon, Seung-Hwan [1 ]
Berkeley, Brian [1 ]
Kim, Sang-Soo [1 ]
机构
[1] Samsung Elect, LCD Business, LCD Dev Ctr, Technol Dev Grp, Asan 336841, Chungnam, South Korea
关键词
color sensor; amorphous silicon; LED backlight; TFT LCD;
D O I
10.1016/j.sna.2006.01.028
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TFT LCDs have the largest market share of all digital flat panel displays. A three color RGB LED LCD backlighting system is very attractive considering wide color gamut, tunable white point, high dimming ratio, long lifetime and environmental compatibility. But the high intensity LED has thermal and time-based dependencies. Color and white luminance levels are not stable over a wide range of temperature due to inherent long-term aging characteristics. In order to minimize color point and brightness differences over time, optical feedback control is a key technology for any LED backlighting system. In this paper, we present the feasibility of an optical color sensing feedback system for an LED backlight by integrating the amorphous silicon color sensor onto the LCD panel. To improve the photoconductivity degradation of amorphous silicon, a new LASER immersion treatment has been applied. The integrated color sensor optical feedback controlled LED backlighting system improved the color variation to less than 0.008 Delta u'v' (CIE1976) compared with 0.025 for an open loop system over the temperature range of 42-76 degrees C. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:214 / 219
页数:6
相关论文
共 7 条
[1]  
Harbers G, 2001, SID S DIGEST TECHNIC, P702
[2]   AN ARRAY OF TFT-ADDRESSED LIGHT SENSORS TO DETECT GREY SHADES AND COLORS [J].
HORST, D ;
LUEDER, E ;
HABIBI, M ;
KALLFASS, T ;
SIEGORDNER, J .
SENSORS AND ACTUATORS A-PHYSICAL, 1995, 47 (1-3) :453-455
[3]   Red, green, and blue LEDs for white light illumination [J].
Muthu, S ;
Schuurmans, FJP ;
Pashley, MD .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (02) :333-338
[4]   STABILITY AND NEW STRUCTURE IN A-SI-H PHOTOCONDUCTIVE SENSORS [J].
NAKAGAWA, K ;
FUKAYA, M ;
SHOJI, T ;
SAKAI, K ;
KOMATSU, T .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :1199-1202
[5]  
SHEN DS, 1992, IEEE SOUTH 92 P, V1, P358
[6]   OPTICALLY INDUCED CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED HYDROGENATED AMORPHOUS-SILICON [J].
STAEBLER, DL ;
WRONSKI, CR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3262-3268
[7]   OPTICAL AND PHOTOCONDUCTIVE PROPERTIES OF DISCHARGE-PRODUCED AMORPHOUS SILICON [J].
ZANZUCCHI, PJ ;
WRONSKI, CR ;
CARLSON, DE .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) :5227-5236