Laser annealing of silicon

被引:38
作者
Baeri, P
Rimini, E
机构
[1] Dipartimento di Fisica, INFM, 95129 Catania
关键词
laser annealing; silicon;
D O I
10.1016/S0254-0584(97)80010-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Developments in the use of lasers to probe material properties of silicon are described, beginning with their origins in the laser annealing of damage in ion-implanted Si. Basic mechanisms of energy deposition and transfer from the photons to the phonons and heat flow in the lattice are discussed. Fundamental understanding of crucial materials issues such as the redistribution of impurities during rapid solidification, metastable phase formation, interface kinetics and the phase diagram of metastable phases of silicon are examined as examples of work that evolved from early experiments on laser annealing.
引用
收藏
页码:169 / 177
页数:9
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