Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method

被引:915
作者
Yuan, Yongbo [1 ,2 ]
Giri, Gaurav [3 ]
Ayzner, Alexander L. [3 ,4 ]
Zoombelt, Arjan P. [3 ]
Mannsfeld, Stefan C. B. [4 ]
Chen, Jihua [5 ]
Nordlund, Dennis [4 ]
Toney, Michael F. [4 ]
Huang, Jinsong [1 ,2 ]
Bao, Zhenan [3 ]
机构
[1] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
[2] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
[3] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA
[4] SLAC Natl Accelerator Lab, Stanford Synchrotron Radiat Lightsource, Menlo Pk, CA 94025 USA
[5] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
来源
NATURE COMMUNICATIONS | 2014年 / 5卷
基金
美国国家科学基金会;
关键词
FIELD-EFFECT TRANSISTORS; THRESHOLD-VOLTAGE; CHARGE-TRANSPORT; SEMICONDUCTORS; IMPURITIES; PRESSURE; CRYSTALS; SENSORS;
D O I
10.1038/ncomms4005
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1] benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2)Vs(-1) (25 cm(2)Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.
引用
收藏
页数:9
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