Room-temperature thousandfold magnetoresistance change in MnSb granular films: Magnetoresistive switch effect

被引：61

作者：

Akinaga, H

Mizuguchi, M

Ono, K

Oshima, M

机构：

[1] Natl Inst Adv Interdisciplinary Res, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 3058562, Japan

[2] Univ Tokyo, Grad Sch Engn, Bunkyo Ku, Tokyo 1138656, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 03期

关键词：

D O I：

10.1063/1.125753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A huge positive magnetoresistance effect has been discovered in MnSb granular films. Granular film consisting of nanoscale MnSb dots that are grown on a sulfur-passivated GaAs (001) substrate by molecular-beam epitaxy, then covered with an Sb thin layer, exhibits magnetic-field-sensitive current-voltage characteristics. When a constant voltage, above the threshold value, is applied to the film, more than 1000% change in the current, which we term magnetoresistive switch, is driven by the magnetoresistance effect under a relatively low magnetic field (less than 0.5 T) at room temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)04303-5].

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页码：357 / 359

页数：3

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