10Gbit/s hybrid-integrated laser diode array module using a planar lightwave circuit (PLC)-platform

被引:4
作者
Mino, S [1 ]
Ohyama, T [1 ]
Akahori, Y [1 ]
Yamada, Y [1 ]
Yanagisawa, M [1 ]
Hashimoto, T [1 ]
Itaya, Y [1 ]
机构
[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECT LABS, ATSUGI, KANAGAWA 24301, JAPAN
关键词
integrated optoelectronics; planar lightwave circuits; semiconductor junction lasers;
D O I
10.1049/el:19961464
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-speed hybrid-integrated two-channel laser diode (LD) array module has been fabricated using a silica-based planar lightwave circuit (PLC) platform, A laser diode array was flip-chip bonded on a PLC platform using AuSn solder bumps. The module showed a wide 3dB bandwidth of 10GHz, which is wide enough for operation at 10Gbit/s.
引用
收藏
页码:2232 / 2233
页数:2
相关论文
共 6 条
  • [1] JACKSON KP, 1992, P ELECTR C, P93, DOI 10.1109/ECTC.1992.204190
  • [2] 2.4 Gbit/s transceiver using silica waveguides on a silicon optical motherboard
    Jones, CA
    Cooper, K
    Nield, MW
    Rush, JD
    Thurlow, AR
    Waller, RG
    Ayliffe, PJ
    Harrison, PM
    [J]. ELECTRONICS LETTERS, 1995, 31 (25) : 2208 - 2210
  • [3] REDUCTION OF WAVE-GUIDE FACET REFLECTION IN OPTICAL HYBRID INTEGRATED-CIRCUIT USING SAW-TOOTHED ANGLED FACET
    OGAWA, I
    YAMADA, Y
    TERUI, H
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (01) : 44 - 46
  • [4] OOYAMA T, 1996, ELECTRON LETT, V32, P845
  • [5] 1.55-MU-M INGAASP/INP LASER BURIED IN A HIGH-RESISTIVITY EPITAXIAL LAYER ON A SEMIINSULATING INP SUBSTRATE
    SAKAI, Y
    ITAYA, Y
    MATSUMOTO, S
    FUKUDA, M
    YAMAMOTO, M
    [J]. ELECTRONICS LETTERS, 1994, 30 (18) : 1481 - 1482
  • [6] YAMADA Y, 1995, OFC 95 SAN DIEG