Identification of emissive interface-related defects in polyfluorene-based light emitting devices

被引：28

作者：

Gamerith, S ^{[1
]}

Nothofer, HG

Scherf, U

List, EJW

机构：

[1] Graz Univ Technol, Inst Solid State Phys, Christian Doppler Lab Funct Mat, A-8010 Graz, Austria

[2] Sony Int Europe GmbH, Mat Sci Labs, D-70327 Stuttgart, Germany

[3] Berg Univ Wuppertal, Fachbereich Chem, D-42097 Wuppertal, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7A期

关键词：

conducting polymer; polyfluorene; polymer light emitting diodes (PLEDs); interface; chemical defect;

D O I：

10.1143/JJAP.43.L891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on a distinct defect related emission band between 2.45 and 2.6eV in blue light emitting polyfluorene type polymer light emitting devices. The origin of this novel feature at 2.45-2.6eV which becomes apparent in addition to the well investigated emission band from bulk keto defects at 2.3eV is spatially located close to the cathode of the device. It is identified as being related to chemical defects in the polymer, formed by a chemical reaction of the polymer in the presence of the deposited cathode metals Al or Ca.

引用

页码：L891 / L893

页数：3

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