Bulk and surface oxygen vacancy formation and diffusion in single crystals, ultrathin films, and metal grown oxide structures

被引:58
作者
Carrasco, J.
Lopez, N.
Illas, F.
Freund, H. -J.
机构
[1] Univ Barcelona, Dept Quim Fis, E-08028 Barcelona, Spain
[2] Univ Barcelona, Ctr Especial Rec Quim Teor, E-08028 Barcelona, Spain
[3] Univ Rovira & Virgili, Inst Chem Res Catalonia ICIQ, Tarragona 43007, Spain
[4] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany
关键词
D O I
10.1063/1.2335842
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The neutral oxygen vacancy (OV) energy formation for bulk, subsurface sites at different depths from the surface and various surface sites has been estimated for single crystals, unsupported ultrathin films of MgO, CaO, and BaO, and MgO ultrathin films supported on Ag(001). From the calculated energy barriers for diffusion through the surface and from the surface to the bulk it is found that diffusion is a hindered event, especially for MgO. Nevertheless, diffusion from the terrace to step edges is largely favored while diffusion through terrace sites is less likely and surface to bulk has a very low probability. It is argued that this explains recent scanning tunneling microscopy images for MgO thin films supported on Ag(001) showing OV populating preferentially the step edge sites. (c) 2006 American Institute of Physics.
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页数:6
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