Comparative study of PECVD SiOCH low-k films obtained at different deposition conditions

被引：24

作者：

Shamiryan, D

Weidner, K

Gray, WD

Baklanov, MR

Vanhaelemeersch, S

Maex, K

机构：

[1] IMEC, Dow Corning, XPEQT, Louvain, Belgium

[2] Dow Corning Corp, Midland, MI USA

[3] Katholieke Univ Leuven, Dept Elect Engn, Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 64卷 / 1-4期

关键词：

low-k dielectric; porosity; silicon oxycarbide;

D O I：

10.1016/S0167-9317(02)00809-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Four CVD SiOCH films deposited at various conditions were used for comparative evaluation. The films were evaluated by RBS, spectroscopic ellipsometry, and ellipsometric porosimetry. Oxygen plasma resistance was studied by spectroscopic ellipsometry and TOF-SIMS analysis after exposure of the films to downstream oxygen plasma. The different deposition conditions result in different carbon content and different porosity. The film with the highest carbon content has the lowest porosity and vice versa. As carbon content of films increases and their porosity decreases, the SiOCH films become more resistant to oxygen plasma. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：361 / 366

页数：6

共 6 条

[1] Nondestructive determination of pore size distribution in thin films deposited on solid substrates [J].