Surface modification of III-V semiconductors: chemical processes and electronic properties

The possibilities of controlling the surface electronic properties of III-V semiconductors by varying the adsorption chemistry are analyzed. Variations of the adsorption process parameters and the adsorbate reactivity are able to affect the surface atomic and electronic structure of the semiconductor. The adsorbate reactivity is considered within the framework of the density functional theory using the reactivity indices. The easiest way to affect the reactivity of a particular adsorbate is to create a solvation shell around it, as is possible in both liquid solutions and the gas phase (microsolvation). Solvation of ions before their adsorption by different solvents affects considerably the relative nucleophility of the central atom in the ion, which results in a different charge transfer mechanism from the surface states on adsorption, and thus, in a different modification of the surface electronic structure of the semiconductor. The effect of halogen, sulfur and metal atoms reactivity on the electronic structure of the resulting adsorbate-covered surface of III-V semiconductor is discussed. (C) 2002 Elsevier Science Ltd. All rights reserved.