Millisecond spin-flip times of donor-bound electrons in GaAs

被引：27

作者：

Fu, Kai-Mei C. ^{[1
]}

Yeo, Wenzheng

Clark, Susan

Santori, Charles

Stanley, Colin

Holland, M. C.

Yamamoto, Yoshihisa

机构：

[1] Stanford Univ, Quantum Informat Project, SORST, JST,Edward L Ginzton Lab, Stanford, CA 94305 USA

[2] Hewlett Packard Labs, Palo Alto, CA 94304 USA

[3] Univ Glasgow, Dept Elect & Elect Engn, Glasgow G12 8LT, Lanark, Scotland

[4] Natl Inst Informat, Tokyo, Japan

来源：

PHYSICAL REVIEW B | 2006年 / 74卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.74.121304

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We observe millisecond spin-flip relaxation times of donor-bound electrons in high-purity n-GaAs. This is three orders of magnitude larger than previously reported lifetimes in n-GaAs. Spin-flip times are measured as a function of magnetic field and exhibit a strong power-law dependence for fields greater than 4 T. This result is in qualitative agreement with previously reported theory and measurements of electrons in quantum dots.

引用

页数：3

共 14 条

[1]

COLTON JS, 2004, PHYS REV B, V69, pR1307

[2] Long-distance quantum communication with atomic ensembles and linear optics [J].