Dielectric dispersion in BaTiO3 single crystal at low temperatures

被引:11
作者
Akishige, Y [1 ]
Nakanishi, T
Mori, N
机构
[1] Shimane Univ, Fac Educ, Matsue, Shimane 690, Japan
[2] Nihon Univ, Coll Humanity & Sci, Setagaya Ku, Tokyo 156, Japan
[3] Univ Tokyo, Inst Solid State Phys, Minato Ku, Tokyo 106, Japan
关键词
BaTiO3; single crystal; dielectric dispersion; low temperature; low frequency;
D O I
10.1080/00150199808015041
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dielectric constants of BaTiO3 single crystals grown by a flux method and a top seeded solution growth (TSSG) method have been reexamined in a wide temperature range of 15 K - 450 K and in a frequency range of 30 Hz - 1 MHz. A low frequency dielectric dispersion with an intensity of Delta epsilon'approximate to 1500 appears at around 100 K only on the crystals grown by the TSSG method. Results of an electric field cooling treatment on the (100)(c) or (111)(c) plates indicate that the dispersion is not due to usual domain-wall motions.
引用
收藏
页码:217 / 222
页数:6
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