Spin gratings and the measurement of electron drift mobility in multiple quantum well semiconductors

被引：119

作者：

Cameron, AR

Riblet, P

Miller, A

机构：

[1] J. F. Allen Research Laboratories, School of Physics and Astronomy, University of St. Andrews, St Andrews

来源：

PHYSICAL REVIEW LETTERS | 1996年 / 76卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.76.4793

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A direct optical measurement of electron drift mobility in multiple quantum well semiconductors is achieved by creating electron spin gratings in time-resolved degenerate four-wave mixing measurements. Grating decay rates are measured for spin and concentration gratings in a GaAs/AlGaAs sample at room temperature, giving an in-well electron diffusion coefficient D-e = 127 cm(2)/s compared with an ambipolar coefficient D-a = 13.3 cm(2)/s.

引用

页码：4793 / 4796

页数：4

共 19 条

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