A novel approach to dual damascene patterning

被引：15

作者：

Hussein, M ^{[1
]}

Sivakumar, S ^{[1
]}

Brain, R ^{[1
]}

Beattie, B ^{[1
]}

Nguyen, P ^{[1
]}

Fradkin, M ^{[1
]}

机构：

[1] Intel Corp, Portland Technol Dev, Hillsboro, OR 97124 USA

来源：

PROCEEDINGS OF THE IEEE 2002 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2002年

关键词：

D O I：

10.1109/IITC.2002.1014874

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present and discuss a novel approach to dual damascene patterning based on the invention of SLAM (Sacrificial Light Absorbing Material) [1,2]. We will focus on dual damascene patterning problems that led to the invention of SLAM, and present a side-by-side comparison of the patterning performance of SLAM-assisted dual damascene patterning and a Bottom Anti-Reflective Coating (BARC), the industry's primary approach. SLAM-assisted dual damascene patterning is an enabling technology for Intel's 130nm technology and beyond.

引用

页码：18 / 20

页数：3