Development of real-time plasma analysis and control algorithms for the TCV tokamak using SIMULINK

被引:25
作者
Felici, F. [1 ,2 ]
Le, H. B. [1 ]
Paley, J. I. [1 ]
Duval, B. P. [1 ]
Coda, S. [1 ]
Moret, J. -M. [1 ]
Bortolon, A. [1 ]
Federspiel, L. [1 ]
Goodman, T. P. [1 ]
Hommen, G. [2 ,5 ]
Karpushov, A. [1 ]
Piras, F. [1 ]
Pitzschke, A. [1 ]
Romero, J. [3 ]
Sevillano, G. [4 ]
Sauter, O. [1 ]
Vijvers, W. [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Assoc Euratom Suisse, Ctr Rech Phys Plasmas, CH-1015 Lausanne, Switzerland
[2] Eindhoven Univ Technol, Dept Mech Engn, Control Syst Technol Grp, NL-5600 MB Eindhoven, Netherlands
[3] CIEMAT, EURATOM, Natl Lab Fus, E-28040 Madrid, Spain
[4] Bilbao Univ Basque Country, Dept Automat Control & Syst Engn, Bilbao, Spain
[5] EURATOM, FOM, Inst DIFFER, Nieuwegein, Netherlands
基金
瑞士国家科学基金会;
关键词
Plasma control; Tokamak; MHD control; Diagnostics; SIMULINK; TCV;
D O I
10.1016/j.fusengdes.2013.11.010
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
One of the key features of the new digital plasma control system installed on the TCV tokamak is the possibility to rapidly design, test and deploy real-time algorithms. With this flexibility the new control system has been used for a large number of new experiments which exploit TCV's powerful actuators consisting of 16 individually controllable poloidal field coils and 7 real-time steerable electron cyclotron (EC) launchers. The system has been used for various applications, ranging from event-based real-time MHD control to real-time current diffusion simulations. These advances have propelled real-time control to one of the cornerstones of the TCV experimental program. Use of the SIMULINK graphical programming language to directly program the control system has greatly facilitated algorithm development and allowed a multitude of different algorithms to be deployed in a short time. This paper will give an overview of the developed algorithms and their application in physics experiments. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码:165 / 176
页数:12
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