Cryogenic ASICs in GaAs for applications with particle detectors

被引:2
作者
Camin, DV [1 ]
Pessina, G [1 ]
机构
[1] IST NAZL FIS NUCL,I-20133 MILAN,ITALY
来源
JOURNAL DE PHYSIQUE IV | 1996年 / 6卷 / C3期
关键词
D O I
10.1051/jp4:1996334
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present two cryogenic Application Specific Integrated circuits (ASIC's) realized with a GaAs MESFET process. A single-channel differential or double-channel single-ended voltage sensitive preamplifier for 4.2 K operation, to be used with bolometric detectors, was realized and tested. A very simple structure working as a unity gain buffer or as a transconductance amplifier, or even as a shaping filter was tested in view of an application with a fast particle detector operated at liquid Argon temperature.
引用
收藏
页码:225 / 230
页数:6
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