Linearity analysis of CMOS for RF application

被引：2

作者：

Kang, S ^{[1
]}

Choi, B ^{[1
]}

Kim, B ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Elect & Elect Engn, Nam Gu, Pohang 790784, Kyungbuk, South Korea

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1012068

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The linearity of CMOS is analyzed. Transconductance and output conductance are two dominant nonlinear sources of CMOS. Capacitances and substrate leakage network do not generate any significant distortions. But they reduce the output impedance for the best linearity and the power gain at a high frequency and the output conductance nonlinearity is significantly at a high frequency. Up to a few GHz, the output conductance is the dominant nonlinear source, and at a higher frequency, the transconductance is the dominant nonlinearity source. OIP3 is reduced by the effects of those components. OIP3s are calculated for various gate length processes. CMOS linearity is dependent only on current density and drain bias voltage but is not dependent on gate length.

引用

页码：363 / 366

页数：4