A critical factor to determine the high-temperature creep resistance in cation-doped polycrystalline Al2O3

被引：5

作者：

Yoshida, H ^{[1
]}

Ikuhara, Y ^{[1
]}

Sakuma, T ^{[1
]}

机构：

[1] Univ Tokyo, Grad Sch Engn, Dept Mat Sci, Bunkyo Ku, Tokyo 1138656, Japan

来源：

CREEP AND FRACTURE OF ENGINEERING MATERIALS AND STRUCTURES | 2000年 / 171-1卷

关键词：

Al(2)O(3); creep resistance; grain boundary segregation; molecular orbital calculations;

D O I：

10.4028/www.scientific.net/KEM.171-174.809

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A small dopant effect on the high-temperature creep resistance in high-purity, polycrystalline Al(2)O(3) is examined by uniaxial compression creep testing in air at temperatures tween 1150 similar to 1350 degrees C under the applied stress of 10 similar to 200 MPa. High-temperature creep resistance in polycrystalline Al(2)O(3) is highly improved by zirconium or lanthanoid ions in the level of about 0.05mol%. High resolution electron microscopy (HREM) and X-ray energy dispersive spectroscopy (EDS) analyse revealed that the dopant cation segregate in grain boundaries, and is likely to influence grain boundary diffusion. This paper aims to show a critical parameter to describe the high-temperature creep rate in cation-doped Al(2)O(3).

引用

页码：809 / 816

页数：8

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