Electrical resistance evolution of Fe thin films during their sulphuration process

被引：18

作者：

Pascual, A

Ares, JR

Ferrer, IJ ^{[1
]}

Sánchez, CR

机构：

[1] Autonomous Univ Madrid, Fac Ciencias, Dept Fis Mat CIV, Lab Mat InteresEnerget, Madrid 28049, Spain

[2] Chim Met Terres Rares, F-94320 Thiais, France

来源：

APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期

关键词：

pyrite thin films; Fe sulphuration; in situ electrical resistance;

D O I：

10.1016/j.apsusc.2004.05.037

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

An experimental system has been developed to investigate the formation of FeS2 thin films by sulphuration of Fe films. The change of the film electrical resistance during the whole sulphuration process is measured to investigate the kinetics of the transformation from Fe to FeS2. Two experimental parameters can be changed in a controlled way: the temperature of the Fe thin film and that of the sulphur source. This allows to accomplish sulphurations at different sulphur pressures with different molecular compositions of the sulphur atmosphere. Preliminary experimental results presented in this paper prove that the experimental system is a powerful tool to investigate the FeS2 (and other metallic sulphides) formation mechanism. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：355 / 361

页数：7

共 28 条

[1] Majority carriers in pyrite thin films:: an analysis based on Seebeck and Hall coefficient measurements [J].