Large-field ion-optics for projection and proximity printing and for mask-less lithography (ML2)

被引：8

作者：

Loeschner, H ^{[1
]}

Stengl, G ^{[1
]}

Buschbeck, H ^{[1
]}

Chalupka, A ^{[1
]}

Lammer, G ^{[1
]}

Platzgummer, E ^{[1
]}

Vonach, H ^{[1
]}

de Jager, PWH ^{[1
]}

Kaesmaier, R ^{[1
]}

Ehrmann, A ^{[1
]}

Hirscher, S ^{[1
]}

Wolter, A ^{[1
]}

Dietzel, A ^{[1
]}

Berger, R ^{[1
]}

Grimm, H ^{[1
]}

Terris, BD ^{[1
]}

Bruenger, WH ^{[1
]}

Adam, D ^{[1
]}

Boehm, M ^{[1
]}

Eichhorn, H ^{[1
]}

Springer, R ^{[1
]}

Butschke, J ^{[1
]}

Letzkus, F ^{[1
]}

Ruchhoeft, P ^{[1
]}

Wolfe, JC ^{[1
]}

机构：

[1] IMS Nanofabricat GMBH, A-1020 Vienna, Austria

来源：

EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷

关键词：

ion projection lithography (IPL); patterned magnetic media; ion beam proximity printing; lithography on non-planar substrates (curved surfaces); mask-less lithography (ML2);

D O I：

10.1117/12.472336

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Recent studies carried out with Infineon Technologies have shown the utility of Ion Projection Lithography (IPL) for the manufacturing of integrated circuits. In cooperation with IBM Storage Technology Division the patterning of magnetic films by resist-less Ion Projection Direct Structuring (IPDS) has been demonstrated. With masked ion beam proximity techniques unique capabilities for lithography on non-planar (curved) surfaces are outlined. Designs are presented for a masked ion beam proximity lithography (MIBPL) exposure tool with sub - 20 nm resolution capability within 88 mmsquare exposure fields. The possibility of extremely high reduction ratios (200:1) for high-volume ion projection mask-less lithography (IP-ML2) is discussed.

引用

页码：595 / 606

页数：4

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