Anisotropic pinning enhancement in Nb films with arrays of submicrometric Ni lines

被引:29
作者
Jaque, D
González, EM
Martin, JI
Anguita, JV
Vicent, JL
机构
[1] Univ Complutense, Fac Ciencias Fis, Dept Fis Mat, E-28040 Madrid, Spain
[2] Univ Oviedo, Fac Ciencias, Dept Fis, Oviedo 33007, Spain
[3] CSIC, Ctr Nacl Microelect, Inst Microelect Madrid, Madrid 28760, Spain
关键词
D O I
10.1063/1.1512947
中图分类号
O59 [应用物理学];
学科分类号
摘要
Arrays of submicrometric Ni lines have been fabricated in superconducting Nb films by electron beam lithography. In the mixed state, these arrays induce strong anisotropy in the dissipation behavior. The dissipation is reduced several orders of magnitude, in the whole applied magnetic field range, when the vortex motion is perpendicular to the Ni lines (applied current parallel to them) in comparison with dissipation of vortices moving parallel to the lines. In addition, for the samples studied in this work, a change in the slope of the rho(B) curves is observed when the vortices move perpendicular to the lines and the vortex lattice parameter matches the width of the Ni lines. (C) 2002 American Institute of Physics.
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页码:2851 / 2853
页数:3
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