Nucleation of SiC on Si and their relationship to nano-dot formation: II. Theoretical investigation

被引：9

作者：

Safonov, KL ^{[1
]}

Kulikov, DV ^{[1
]}

Trushin, YV ^{[1
]}

Pezoldt, J ^{[1
]}

机构：

[1] St Petersburg State Tech Univ, St Petersburg 295251, Russia

来源：

FIFTH INTERNATIONAL WORKSHOP ON NONDESTRUCTIVE TESTING AND COMPUTER SIMULATIONS IN SCIENCE AND ENGINEERING | 2002年 / 4627卷

关键词：

capture rate; cluster nucleation and growth; molecular beam epitaxy; scaling; surface diffusion;

D O I：

10.1117/12.456260

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

The processes of SiC clusters growth on Si(111) surface has been investigated theoretically. The SiC cluster formation and growth on Si surface stimulated by deposition of elemental carbon onto Si(111) with molecular beams have been studied by applying the kinetic equations (co-called rate equations) method. The simulated cluster size distribution function obtained within this method appeared to be in reasonable agreement with the experimental data. Obtained cluster capture rates agree with KMC investigations.

引用

页码：165 / 169

页数：5

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