Plasma hydrogenation of Al, Mg and MgAl films under high-flux ion irradiation at elevated temperature

被引：28

作者：

Pranevicius, L

Milcius, D

Pranevicius, LL

Thomas, G

机构：

[1] Vytautas Magnus Univ, Dept Phys, LT-3035 Kaunas, Lithuania

[2] Lithuanian Energy Inst, Surface Treatment Lab, LT-3035 Kaunas, Lithuania

[3] Sandia Natl Labs, Reno, NV 89511 USA

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2004年 / 373卷 / 1-2期

关键词：

thin films; hydrogen storage material; vapour deposition; X-ray diffraction;

D O I：

10.1016/j.jallcom.2003.10.029

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The behaviors of hydrogen in Al, Mg and MgAl thin films on stainless steel substrate were investigated in this work. The hydrogen ions extracted from plasma were used to load hydrogen into the film material. Glow discharge optical emission spectroscopy (GDOES) was applied to obtain the hydrogen depth profiles in Al films versus hydriding parameters. The MgH2, AlH2 and Mg(AlH4)(2) hydrides were identified in plasma hydrided films using X-ray diffraction (XRD). The results provide new aspects of hydriding of thin films under highly non-equilibrium conditions on the surface supported by high-flux ion irradiation. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：9 / 15

页数：7

共 17 条

[1] Aluminum and iron surface modification by deuterium ion implantation and thermal desorption process [J].