Effect of InAs dots on noise of quantum dot resonant tunneling single-photon detectors

被引：24

作者：

Hees, S. S.

Kardynal, B. E.

See, P.

Shields, A. J.

Farrer, I.

Ritchie, D. A.

机构：

[1] Toshiba Res Europe Ltd, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 15期

基金：

英国工程与自然科学研究理事会;

关键词：

D O I：

10.1063/1.2362997

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors present a systematic study of the effect of InAs deposition time on single photon detectors based on quantum dot resonant tunneling diodes. A dramatic improvement in the dark counts due to the electron generation-recombination events in the dots is found by reducing the size of the dots. The dark count rate can be improved to less than 6.6x10(-10) ns(-1) while maintaining a single photon detection efficiency of 2%. (c) 2006 American Institute of Physics.

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页数：3

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