MgB2 thin films for superconducting electronics

被引:67
作者
Naito, M [1 ]
Ueda, K [1 ]
机构
[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan
关键词
D O I
10.1088/0953-2048/17/7/R01
中图分类号
O59 [应用物理学];
学科分类号
摘要
This review article describes the developments over the last 30 months in the thin film growth and junction fabrication of superconducting MgB2, including a brief summary of the chemistry and physics of MgB2. The most serious problem is the high Mg vapour pressure required for the phase stability. This problem makes in situ film growth difficult. So, most of the initial efforts were performed by two-step growth, namely ex situ post-annealing. Later, in situ physical vapour deposition and recently in situ chemical vapour deposition were reported. Each growth method is described in detail and compared. The past efforts at fabricating MgB2 junctions are summarized, and the future prospects for MgB2 superconducting electronics are briefly described.
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收藏
页码:R1 / R18
页数:18
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