Direct Observation of Born-Oppenheimer Approximation Breakdown in Carbon Nanotubes

被引：37

作者：

Bushmaker, Adam W. ^{[1
]}

Deshpande, Vikram V. ^{[2
]}

Hsieh, Scott ^{[2
]}

Bockrath, Marc W. ^{[2
]}

Cronin, Stephen B. ^{[1
]}

机构：

[1] Univ So Calif, Dept Elect Engn Electrophys, Los Angeles, CA 90089 USA

[2] CALTECH, Pasadena, CA 91125 USA

来源：

NANO LETTERS | 2009年 / 9卷 / 02期

基金：

美国国家科学基金会;

关键词：

ELECTRICAL-TRANSPORT; RAMAN-SPECTROSCOPY;

D O I：

10.1021/nl802854x

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Raman spectra and electrical conductance of individual, pristine, suspended, metallic single-walled carbon nanotubes are measured under applied gate potentials. The G. band is observed to downshift with small applied gate voltages, with the minima occurring at E-F = +/- 1/2E(phonon), contrary to adiabatic predictions. A subsequent upshift in the Raman frequency at higher gate voltages results in a "W"-shaped Raman shift profile that agrees well with a nonadiabatic phonon renormalization model. This behavior constitutes the first experimental confirmation of the theoretically predicted breakdown of the Born-Oppenheimer approximation in individual single-walled carbon nanotubes.

引用

页码：607 / 611

页数：5

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