A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

被引：295

作者：

Liu, Min-Ling ^{[1
]}

Huang, Fu-Qiang ^{[1
]}

Chen, Li-Dong ^{[1
]}

Chen, I-Wei ^{[2
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China

[2] Univ Penn, Dept Mat Sci & Engn, Philadelphia, PA 19104 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 20期

基金：

美国国家科学基金会;

关键词：

copper compounds; electrical conductivity; semiconductor doping; thermal conductivity; thermoelectricity; wide band gap semiconductors; zinc compounds; ELECTRONIC-STRUCTURE; THIN-FILMS; SN; SEMICONDUCTOR; TRANSPORT; CRYSTAL; SYSTEM;

D O I：

10.1063/1.3130718

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Chalcopyritelike quaternary chalcogenides, Cu(2)ZnSnQ(4) (Q=S,Se), were investigated as an alternative class of wide-band-gap p-type thermoelectric materials. Their distorted diamondlike structure and quaternary compositions are beneficial to lowering lattice thermal conductivities. Meanwhile, partial substitution of Cu for Zn creates more charge carriers and conducting pathways via the CuQ(4) network, enhancing electrical conductivity. The power factor and the figure of merit (ZT) increase with the temperature, making these materials suitable for high temperature applications. For Cu(2.1)Zn(0.9)SnQ(4), ZT reaches about 0.4 at 700 K, rising to 0.9 at 860 K.

引用

页数：3

共 23 条

[1] Effect of post-deposition annealing on the growth of Cu2ZnSnSe4 thin films for a solar cell absorber layer [J].

Babu, G. Suresh ;

Kumar, Y. B. Kishore ;

Bhaskar, P. Uday ;

Raja, V. Sundara .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (08) :085023

[2]

BERGER LI, 1964, IZV AN SSSR FIZ, V28, P1100

[3] CuAIS2 thin-films prepared by sulfurization of metallic precursors and their properties [J].

Bhandari, RK ;

Hashimoto, Y ;

Ito, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (10) :6890-6893

[4] Phase equilibria in the Cu2SnSe3-SnSe2-ZnSe system [J].

Dudchak, IV ;

Piskach, LV .

JOURNAL OF ALLOYS AND COMPOUNDS, 2003, 351 (1-2) :145-150

[5]

*EPAPS, EAPPLAB94002919 EPAP, P45504

[6] Phase relations and optical properties of semiconducting ternary sulfides in the system Cu-Sn-S [J].

Fiechter, S ;

Martinez, M ;

Schmidt, G ;

Henrion, W ;

Tomm, Y .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2003, 64 (9-10) :1859-1862

[7]

HALL SR, 1978, CANADIAN MINERALOGIS, V0016

[8] PBTE DEBYE-WALLER FACTORS AND BAND-GAP TEMPERATURE DEPENDENCE [J].

KEFFER, C ;

HAYES, TM ;

BIENENSTOCK, A .

PHYSICAL REVIEW LETTERS, 1968, 21 (25) :1676-+

[9] Electronic structure and transport of Bi2Te3 and BaBiTe3 [J].

Larson, P ;

Mahanti, SD ;

Kanatzidis, MG .

PHYSICAL REVIEW B, 2000, 61 (12) :8162-8171

[10] Syntheses, crystal and electronic structure, and some optical and transport properties of LnCuOTe (Ln = La, Ce, Nd) [J].

Liu, Min Ling ;

Wu, Li Bin ;

Huang, Fu Qiang ;

Chen, Li Dong ;

Ibers, James A. .

JOURNAL OF SOLID STATE CHEMISTRY, 2007, 180 (01) :62-69

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