Study of hole concentration of 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine doped with tungsten oxide by admittance spectroscopy

被引：42

作者：

Hsieh, Ming-Ta ^{[1
]}

Chang, Chan-Ching

Chen, Jenn-Fang

Chen, Chin H.

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

[2] Natl Chiao Tung Univ, MIRC, Display Inst, Hsinchu 30050, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 10期

关键词：

D O I：

10.1063/1.2345610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N-'-phenylamino]-4,4(') diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectroscopy studies show that increasing the WO3 volume percentage from 0% to 16% can increase the hole concentration of the NBP layer from 1.97x10(14) to 1.90x10(17) cm(-3) and decrease the activation energy of the resistance of the NPB layer from 0.354 to 0.176 eV. Thus, this incorporation reduces the Ohmic loss and increases the band bending in the NBP layer near the interface, resulting in an improved hole injection via tunneling through a narrow depletion region. (c) 2006 American Institute of Physics.

引用

页数：3

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