Sol-gel deposition and characterization of Mn2+-doped silicate phosphor films

被引：123

作者：

Lin, J

Sänger, DU

Mennig, M

Bärner, K

机构：

[1] Inst Neue Mat, D-66123 Saarbrucken, Germany

[2] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany

来源：

THIN SOLID FILMS | 2000年 / 360卷 / 1-2期

关键词：

sol-gel process; manganese; silicate thin film; luminescence;

D O I：

10.1016/S0040-6090(99)00523-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mn2+ doped Zn2SiO4 and Mg2Gd8(SiO4)(6)O-2 phosphor films were deposited on silicon and quartz glass substrates by sol-gel process (dip-coating). The variations of sol viscosity with time and film thickness with the number of layers were investigated in Zn2SiO4: Mn system. The results of XRD and IR showed that the Zn2SiO4: Mn films remained amorphous below 700 degrees C and crystallized completely around 1000 degrees C. From AFM studies, it was observed that the grains with 0.5-0.8 mu m size packed closely in Zn2SiO4: Mn films, which were uniform and crack free. The luminescence properties of Zn2SiO4: Mn films were characterized by absorption, excitation and emission spectra as well as luminescence decay. These properties were discussed in derail by a comparison with those of Mn2+ (and Pb2+)-doped Mg2Gd8(SiO4)(6)O-2 phosphor films. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：39 / 45

页数：7

共 22 条

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