Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering

被引：51

作者：

Bharadwaja, S. S. N. ^{[1
]}

Venkatasubramanian, C. ^{[2
]}

Fieldhouse, N. ^{[2
]}

Ashok, S. ^{[2
]}

Horn, M. W. ^{[2
]}

Jackson, T. N. ^{[3
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

[2] Penn State Univ, Dept Engn Sci, University Pk, PA 16802 USA

[3] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 22期

关键词：

hopping conduction; sputter deposition; thin films; vanadium compounds; ELECTRICAL-PROPERTIES; LOCALIZED STATES; COULOMB GAP; CONDUCTION; CROSSOVER; MOTT;

D O I：

10.1063/1.3139864

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

Low temperature charge transport in vanadium oxide (VOx) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity rho(T) of the VOx thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.

引用

页数：3

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