Ellipsometric characterization of random and random-dimer GaAs-AlxGa1-xAs superlattices -: art. no. 193310

被引：7

作者：

Bellani, V ^{[1
]}

Parravicini, GB

Diez, E

Domínguez-Adame, F

Hey, R

机构：

[1] Univ Pavia, INFM, Dipartimento Fis A Volta, I-27100 Pavia, Italy

[2] Univ Complutense, GISC, Dept Fis Mat, E-20840 Madrid, Spain

[3] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.66.193310

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We studied the optical properties of ordered and intentionally disordered GaAs-AlxGa1-xAs superlattices, with and without dimer-type correlations in the disorder, by means of spectroscopic ellipsometry. The electronic structure of the superlattices has been calculated and compared with the experiments. The optical transitions in ordered, correlated, and uncorrelated disordered superlattices show specific features that we relate to their different electronic structures.

引用

页码：1 / 3

页数：3

共 16 条

[1]

Adachi S., 1994, GaAs and Related Materials: Bulk Semiconducting and Superlattice Properties

[2] INTERBAND-TRANSITIONS IN ULTRATHIN GAAS-ALAS SUPERLATTICES [J].