Influence of CVD diamond film textures on the electrical response of radiation detectors

被引:9
作者
Jany, C [1 ]
Foulon, F [1 ]
Bergonzo, P [1 ]
Brambilla, A [1 ]
Gicquel, A [1 ]
Pochet, T [1 ]
机构
[1] UNIV PARIS 13,CNRS,LAB INGN MAT & HAUTES PRESS,F-93430 VILLETANEUSE,FRANCE
关键词
D O I
10.1016/S0168-9002(96)00341-5
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
The influence of the texture of polycrystalline CVD diamond films on their electrical properties was studied. The films were deposited by a microwave-plasma-enhanced chemical vapour deposition technique (MPCVD). <110> and <100> textured films, and non-textured films were produced under different growth conditions. Extensive measurements were carried out in order to probe the electrical properties of the films: resistivity, carrier lifetimes, mobility and carrier drift length before trapping. The influence of nitrogen impurities on the film electrical properties is addressed. CVD diamond detectors were characterised electrically in photo-current mode at room temperature under X-ray radiation at 40 keV. The results give evidence of a strong influence of the texture, nitrogen impurities and polycrystalline structural defects of the films on their use as X-ray detectors.
引用
收藏
页码:107 / 111
页数:5
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