Ferroelectric relaxor behavior in hafnium doped barium-titanate ceramic

被引:88
作者
Anwar, Shahid [1 ]
Sagdeo, P. R. [1 ]
Lalla, N. P. [1 ]
机构
[1] UGC DAE Consortium Sci Res, Indore 452017, India
关键词
ferroelectric; structure; dielectric;
D O I
10.1016/j.ssc.2006.03.018
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Temperature and frequency dependence of the real (epsilon') and imaginary (epsilon") parts of the dielectric permitivity of cubic Ba(Ti0.7Hf0.3)O-3 ceramic has been studied in the temperature range of 100 K to 350 K at the frequencies 0.1 kHz, 1 kHz, 10 kHz, 100 kHz for the first time. Diffuse phase transition and frequency dispersion is observed in the permittivity-vs-temperature plots. This has been attributed to the occurrence of relaxor ferroelectric behavior. The observed relaxor behavior has been quantitatively characterized based on phenomenological parameters. A comparison with the Zr doped BaTiO3 has also been presented. For Hf doped samples transmission electron microscopy (TEM) characterization do show the presence of highly disordered microstructure at length scales of few tens of nano-meters. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:331 / 336
页数:6
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