Low-heat high-power scaling using InGaAs-diode-pumped Yb:YAG lasers

被引：175

作者：

Bruesselbach, HW ^{[1
]}

Sumida, DS ^{[1
]}

Reeder, RA ^{[1
]}

Byren, RW ^{[1
]}

机构：

[1] HUGHES AIRCRAFT CO,SENSORS & COMMUN SYST SEGMENT,EL SEGUNDO,CA 90245

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 01期

关键词：

CW lasers; laser amplifiers; optical spectroscopy; power lasers; pulsed lasers; semiconductor laser arrays; solid lasers; YAG lasers; ytterbium devices;

D O I：

10.1109/2944.585822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report to our knowledge the highest to date quasi-CW output power, 600 W and pulse energy, >1 J, for an InGaAs diode-pumped Yb:YAG laser. In separate preliminary results, we have also obtained 225 W of average output power under true CW diode pumping. This performance was obtained using a laser head designed to be part of a master oscillator power amplifier (MOPA) operating at 3 kW. We summarize why the diode-pumped Yb:YAG crystal laser is ideal for scaling to high average powers and the different approaches being pursued. We also report our latest results for side-pumped rod devices.

引用

页码：105 / 116

页数：12

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