Laser-induced melting of silicon: A tight-binding molecular dynamics simulation

被引：30

作者：

Gambirasio, A

Bernasconi, M

Colombo, L

机构：

[1] Univ Milano bicocca, Ist Nazl Fis Mat, I-20125 Milan, Italy

[2] Univ Milano bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Univ Cagliari, Ist Nazl Fis Mat, I-09042 Monserrato, CA, Italy

[4] Univ Cagliari, Dipartimento Fis, I-09042 Monserrato, CA, Italy

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.61.8233

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The tight-binding molecular dynamics method with hot electrons is used to simulate the laser-induced melting of silicon. The results are in good agreement with previous ab initio simulation and experimental data. Our findings assess the reliability of the tight-binding model to describe silicon with a high concentration of excited electrons. The role of volume changes in the laser-induced melting has also been addressed within constant-pressure tight-binding molecular dynamics.

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页码：8233 / 8237

页数：5

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