Mobility of Ga confined in nanostructured alumina

被引：12

作者：

Konrad, H ^{[1
]}

Karmonik, C ^{[1
]}

Weissmuller, J ^{[1
]}

Gleiter, H ^{[1
]}

Birringer, R ^{[1
]}

Hempelmann, R ^{[1
]}

机构：

[1] FORSCHUNGSZENTRUM KARLSRUHE GMBH,D-76021 KARLSRUHE,GERMANY

来源：

PHYSICA B | 1997年 / 234卷

关键词：

diffusion; nanoscale objects; quasielastic scattering; thin films;

D O I：

10.1016/S0921-4526(96)00941-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The melting behavior of thin Ga films confined at the grain boundaries of nanostructured alumina was investigated by DSC. At temperatures near T-m part of the Ga film is molten whereas about six monolayers remain solid even 20 K above T-m. The diffusion of the Ga was investigated by means of QENS. The molten Ga film exhibits a lower diffusivity than bulk liquid Ga. This is rationalised in terms of the confined geometry.

引用

页码：173 / 174

页数：2

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