Molecular beam epitaxial growth of InAs quantum dots directly on silicon

被引：9

作者：

Hansen, L ^{[1
]}

Bensing, F ^{[1
]}

Waag, A ^{[1
]}

机构：

[1] Univ Wurzburg, Phys Inst EP 3, D-97074 Wurzburg, Germany

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 11期

关键词：

InAs; Si; quantum dots; MBE; optoelectronics;

D O I：

10.1143/JJAP.38.6219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAs quantum dots (QD) embedded in a silicon matrix show a photoluminescence line at a wavelength of about 1.3 mu m [Semicond. Sci. Technol. 13 (1998) 1262]. This wavelength range is very interesting for the integration of classical silicon technology with optical fiber applications for chip-to-chip or intra-chip communication. To get InAs QDs of reproducible size and shape the growth conditions for the formation of quantum dots have to be optimized. Here; we report on detailed investigations on the molecular beam epitaxial growth of InAs QDs on silicon and their embedding in a silicon matrix. A variety of surface analytical techniques have been used, including in-situ electron diffraction (RHEED), in-situ photoelectron spectroscopy (XPS) and ex-situ atomic force microscopy (AFM).

引用

页码：6219 / 6221

页数：3

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