Gigantic enhancement in response and reset time of ZnO UV nanosensor by utilizing Schottky contact and surface functionalization

被引:508
作者
Zhou, Jun [1 ,2 ]
Gu, Yudong [1 ,3 ]
Hu, Youfan [1 ]
Mai, Wenjie [1 ]
Yeh, Ping-Hung [1 ]
Bao, Gang [2 ]
Sood, Ashok K. [4 ]
Polla, Dennis L. [5 ]
Wang, Zhong Lin [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Emory Univ, Dept Biomed Engn, Atlanta, GA 30332 USA
[3] Peking Univ, Coll Engn, Dept Adv Mat & Nanotechnol, Beijing 100084, Peoples R China
[4] Magnolia Opt Technol Inc, Woburn, MA 01801 USA
[5] DARPA MTO, Arlington, VA 22203 USA
关键词
II-VI semiconductors; microsensors; nanotechnology; Schottky barriers; semiconductor quantum wires; ultraviolet detectors; wide band gap semiconductors; zinc compounds; ULTRAVIOLET PHOTODETECTORS;
D O I
10.1063/1.3133358
中图分类号
O59 [应用物理学];
学科分类号
摘要
UV response of ZnO nanowire nanosensor has been studied under ambient condition. By utilizing Schottky contact instead of Ohmic contact in device fabrication, the UV sensitivity of the nanosensor has been improved by four orders of magnitude, and the reset time has been drastically reduced from similar to 417 to similar to 0.8 s. By further surface functionalization with function polymers, the reset time has been reduced to similar to 20 ms even without correcting the electronic response of the measurement system. These results demonstrate an effective approach for building high response and fast reset UV detectors.
引用
收藏
页数:3
相关论文
共 19 条
[1]   Enhanced photoresponse in ZnO nanowires decorated with CdTe quantum dot [J].
Aga, R. S., Jr. ;
Jowhar, D. ;
Ueda, A. ;
Pan, Z. ;
Collins, W. E. ;
Mu, R. ;
Singer, K. D. ;
Shen, J. .
APPLIED PHYSICS LETTERS, 2007, 91 (23)
[2]   Origin of the slow photoresponse in an individual sol-gel synthesized ZnO nanowire [J].
Ahn, Seung-Eon ;
Ji, Hyun Jin ;
Kim, Kanghyun ;
Kim, Gyu Tae ;
Bae, Chang Hyun ;
Park, Seung Min ;
Kim, Yong-Kwan ;
Ha, Jeong Sook .
APPLIED PHYSICS LETTERS, 2007, 90 (15)
[3]   Electrical properties of ZnO nanowire-field effect transistors characterized with scanning probes [J].
Fan, ZY ;
Lu, JG .
APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3
[4]  
FAN ZY, 2008, APPL PHYS LETT, V8, P20
[5]   Solution-processed ultraviolet photodetedtors based on colloidal ZnO nanoparticles [J].
Jin, Yizheng ;
Wang, Jianpu ;
Sun, Baoquan ;
Blakesley, James C. ;
Greenham, Neil C. .
NANO LETTERS, 2008, 8 (06) :1649-1653
[6]   Photocurrent in ZnO nanowires grown from Au electrodes [J].
Keem, K ;
Kim, H ;
Kim, GT ;
Lee, JS ;
Min, B ;
Cho, K ;
Sung, MY ;
Kim, S .
APPLIED PHYSICS LETTERS, 2004, 84 (22) :4376-4378
[7]  
Kind H, 2002, ADV MATER, V14, P158, DOI 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO
[8]  
2-W
[9]   Giant enhancement in UV response of ZnO nanobelts by polymer surface-functionalization [J].
Lao, Chang Shi ;
Park, Myung-Chul ;
Kuang, Qin ;
Deng, Yulin ;
Sood, Ashok K. ;
Polla, Dennis L. ;
Wang, Zhong L. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2007, 129 (40) :12096-+
[10]   Simple fabrication of a ZnO nanowire photodetector with a fast photoresponse time [J].
Law, JBK ;
Thong, JTL .
APPLIED PHYSICS LETTERS, 2006, 88 (13)