Fabrication and optical characterization of five-layer asymmetric coupled quantum well (FACQW)

被引：11

作者：

Suzuki, T ^{[1
]}

Noh, JH ^{[1
]}

Arakawa, T ^{[1
]}

Tada, K ^{[1
]}

Okamiya, Y ^{[1
]}

Miyagi, Y ^{[1
]}

Sakai, N ^{[1
]}

Haneji, N ^{[1
]}

机构：

[1] Yokohama Natl Univ, Grad Sch Engn, Dept Elect & Comp, Hodogaya Ku, Yokohama, Kanagawa 2408501, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 4B期

关键词：

quantum well; five-layer asymmetric coupled quantum well (FACQW); optical modulator; optical switch; migration-enhanced epitaxy (MEE);

D O I：

10.1143/JJAP.41.2701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The five-layer asymmetric coupled quantum well (FACQW) is a new potential-tailored quantum well (QW) that is promising for ultrafast and ultralow-voltage optical modulators and switches. We succeeded in fabricating GaAs/AlGaAs FACQW with monolayer accuracy by the molecular beam epitaxy (MBE) method by monitoring reflection high-energy electron diffraction (RHEED) specular beam intensity oscillation. Photoabsorption current measurements of the FACQW sample showed good agreement with theoretical results, and a potential for much lower voltage operation, In addition, we studied the growth sequences of GaAs/AlGaAs QWs in the migration-enhanced epitaxy (MEE) method in order to fabricate the FACQW with steeper and flatter heterointerfaces. The sequence of supplying materials for Al0.3Ga0.7As growth, on which there is no report, was modified and optimized, and the QWs of higher quality were obtained at a growth temperature of 490degreesC using the optimized sequence. The results of photoluminescence measurements show that the MEE method modified as mentioned above is a promising growth technique for the fabrication of FACQWs of higher quality.

引用

页码：2701 / 2706

页数：6

共 12 条

[1] Anomalous sharp dip of large field-induced refractive index change in GaAs/AlGaAs five-layer asymmetric coupled quantum well [J].